參數(shù)資料
型號(hào): 2N3713
廠商: AMERICAN MICROSEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
封裝: TO-3, 2 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 263K
代理商: 2N3713
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2N3713 Information
Category Transistors
Class Transistors; Bipolar; Si NPN Power
Type Transistors; Bipolar; Si NPN Power
2N3713 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 80
I(C) Max. (A) : 10
Absolute Max. Power Diss. (W) : 150
Maximum Operating Temp (шC) : 175х
I(CBO) Max. (A) : 1.0mч
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 25
h(FE) Max. Current gain. : 75
@I(C) (A) (Test Condition) : 1.0
@V(CE) (V) (Test Condition) : 2.0
f(T) Min. (Hz) Transition Freq : 30k
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay time. :
t(r) Max. (s) Rise time : 450nВ
t(on) Max. (s) On time. :
t(s) Max. (s) Storage time. : 300nВ
t(f) Max. (s) Fall time. : 400nВ
t(off) Max. (s) Off time :
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Did you Know...
2N3713 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio...
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N3713
1 of 2
11/7/2009 2:02 AM
相關(guān)PDF資料
PDF描述
2N3715R1 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N3715SMDR4 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB
2N3715 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
2N3716XR1 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N3716X 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA
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2N3713 LEADFREE 功能描述:兩極晶體管 - BJT NPN GP Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3713_12 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:EPITAXIAL-BASE TRANSISTORS
2N3713SMD 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed
2N3714 功能描述:兩極晶體管 - BJT NPN GP Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3714SMD 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed