參數(shù)資料
型號(hào): 2N3700DCSMG4
廠商: SEMELAB LTD
元件分類: 小信號(hào)晶體管
英文描述: 1000 mA, 80 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: HERMETIC SEALED, CERAMIC, LCC2-6
文件頁數(shù): 2/2頁
文件大?。?/td> 18K
代理商: 2N3700DCSMG4
2N3700DCSM
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 5309
Issue 1
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
nA
A
nA
V
-
V
80
10
0.2
0.5
1.1
50
90
100
300
50
15
40
140
7
IC =30mA
VCB = 90V
Tamb = 150°C
VEB = 5V
IC = 150mA
IB = 15mA
IC = 500mA
IB = 50mA
IC = 150mA
IB = 15mA
IC = 0.1mA
IC = 10mA
IC = 150mA
IC = 500mA
IC = 1A
IC = 150mA
Tamb = -55°C
IC = 100A
IE = 100A
VCEO*
Collector – Emitter Sustaining Voltage
(IB = 0)
ICBO*
Collector – Base Cut-off Current
(IE = 0)
IEBO*
Emitter Cut-off Current (IC = 0)
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
hFE*
DC Current Gain (VCE = 10V)
V(BR)CBO
Collector-base Breakdown Voltage
(IE = 0)
V(BR)EBO
Emitter-base BreakdownVoltage
(IC = 0)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS (per Device) (Tcase = 25°C unless otherwise stated)
fT
Transition Frequency
hfe
Small Signal Current Gain
CEBO
Emitter-base Capacitance
CCBO
Collector-base Capacitance
rbb’Cb’c
Feedback time constant
IC = 50mA
VCE = 10V
f = 20MHz
IC = 1mA
VCE = 5V
f = 1kHz
IC = 0
VEB = 0.5V
f = 1MHz
IC = 0
VCB = 10V
f = 1MHz
IC = 10mA
VCB = 10V
f = 4MHz
100
80
400
60
12
25
400
MHz
-
pF
ps
* Pulse test tp = 300s , δ ≤ 1%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
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