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參數(shù)資料
| 型號： | 2N3700 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封裝： | METAL PACKAGE-3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 109K |
| 代理商： | 2N3700 |
2N3700
Electrical characteristics
3/7
2
Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 3.
Electrical characteristics
Note:
(1) Pulsed: Pulse duration = 300 s, duty cycle ≤ 1 %
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 90V
Tamb = 150°C
10
nA
A
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5V
10
nA
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100A
140
V
V(BR)CEO(1)
Collector-emitter breakdown
voltage (IB = 0)
IC = 30mA
80
V
V(BR)EBO
Emitter-base breakdown voltage
(IC = 0)
IE = 100A
7V
VCE(sat) (1)
Collector-emitter saturation
voltage
IC = 150mA
IB = 15mA
IC = 0.5A
IB = 50mA
0.2
0.5
V
VBE(sat) (1) Base-emitter saturation voltage IC = 150mA
IB = 15mA
1.1
V
hFE
DC current gain
IC = 0.1mA
VCE = 10V
IC = 10mA
VCE = 10V
IC = 150mA
VCE = 10V
IC = 500mA
VCE = 10V
IC = 1A
VCE = 10V
IC = 150mA
VCE = 10V
Tamb = -55°C
50
90
100
50
15
40
300
hfe
Small signal current gain
IC = 1mA
VCE = 5V
f = 1kHz
80
400
fT
Transition frequency
IC = 50mA
VCE = 10V
f = 20MHz
100
MHz
CEBO
Emitter-base capacitance
IC = 0
VEB = 0.5V
f = 1MHz
60
pF
CCBO
Collector-base capacitance
IE = 0
VCB = 10V
f = 1MHz
12
pF
rbb’ Cb’c Feedback time constant
IC = 10mA
VCB = 10V
f = 4MHz
25
400
ps
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2N3700 | 制造商:STMicroelectronics 功能描述:BIPOLAR TRANSISTOR NPN 80V TO-18 |
| 2N3700_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:General purpose amplifiers |
| 2N37000UBSW | 制造商:STMicroelectronics 功能描述: |
| 2N3700CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN TRANSISTOR |
| 2N3700DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
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