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參數(shù)資料
| 型號： | 2N37000UBSW |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, LCC-3 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 271K |
| 代理商： | 2N37000UBSW |
2N3700HR
Electrical characteristics
Doc ID 15354 Rev 3
3/11
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 5.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off
current (IE = 0)
VCB = 90 V
Tamb = 150 °C
10
nA
A
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
10
nA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 100 A
140
V
V(BR)CEO
(1)
1.
Pulsed duration = 300 s, duty cycle
≤ 2 %
Collector-emitter
breakdown voltage
(IB = 0)
IC = 30 mA
80
V
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 100 A
7
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 150 mA
IB = 15 mA
IC = 500 mA
IB = 50 mA
0.2
0.5
V
VBE(sat)
(1)
Base-emitter
saturation voltage
IC = 150 mA
IB = 15 mA
1.1
V
hFE
(1)
DC current gain
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
IC = 500 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
Tamb = - 55 °C
90
100
50
40
300
hfe
Small signal current
gain
VCE = 10 V
IC = 50 mA
f = 20 MHz
5
CCBO
Output capacitance
(IE = 0)
VCB = 10 V
f = 1 MHz
12
pF
CIBO
Input capacitance
(IC = 0)
VEB = 0.5 V
f = 1 MHz
60
pF
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