參數(shù)資料
型號: 2N3663
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: NPN RF Transistor
中文描述: VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
文件頁數(shù): 1/2頁
文件大?。?/td> 23K
代理商: 2N3663
2
Discrete POWE R & Signal
Technologies
NPN RF Transistor
2N3663
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
12
30
3.0
50
V
V
V
mA
°
C
-55 to +150
Symbol
Characteristic
Max
Units
2N3663
350
2.8
125
357
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
ECB
TO-92
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43. See PN918 for characteristics.
1997 Fairchild Semiconductor Corporation
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