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參數(shù)資料
| 型號(hào)： | 2N3637G4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | 2N3637G4 |
SILICON PNP TRANSISTOR
2N3637
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 3068
Issue 3
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = -10mA
IB = 0
-175
V
VBE = -5.0V
IC = 0
-10
A
IEBO
Emitter Cut-Off Current
VBE = -3.0V
IC = 0
-50
VCB = -100V
IE = 0
-100
nA
TA = 150°C
-10
ICBO
Collector Cut-Off Current
VCB = -175V
IE = 0
-10
A
IC = -0.10mA
VCE = -10V
55
IC = -1.0mA
VCE = -10V
90
IC = -10mA
VCE = -10V
100
IC = -50mA
VCE = -10V
100
300
TA = -55°C
50
hFE
(1)
DC Current Gain
IC = -150mA
VCE = -10V
60
IC = -10mA
IB = -1.0mA
-0.3
VCE(sat)
(1)
Collector-Emitter
Saturation Voltage
IC = -50mA
IB = -5.0mA
-0.6
IC = -10mA
IB = -1.0mA
-0.8
VBE(sat)
(1)
Base-Emitter
Saturation Voltage
IC = -50mA
IB = -5.0mA
-0.65
-0.9
V
DYNAMIC CHARACTERISTICS
IC = -30mA
VCE = -30V
fT
Transition Frequency
f = 100MHz
100
MHz
IC = 10mA
VCE = 10V
hfe
Small-Signal Current Gain
f = 1.0KHz
80
320
VCB = -20V
IE = 0
Cobo
Output Capacitance
f = 1.0MHz
10
pF
VEB = -1.0V
IC = 0
Cibo
Input Capacitance
f = 1.0MHz
75
pF
ton
Turn-On Time
VCC = -100V
VBE = 4.0V
400
toff
Turn-Off Time
IC = -50mA
IB1 = -IB2 = -5mA
600
ns
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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