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參數(shù)資料
| 型號： | 2N3635UB |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2N3635UB |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0156 Rev. 2 (101452)
Page 2 of 5
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
hFE
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 50mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N3634, 2N3636
25
45
50
30
150
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 50mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N3635, 2N3637
55
90
100
60
300
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
0.3
0.6
Base-Emitter Saturation Voltage
VBE(sat)
Vdc
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
0.65
0.8
0.9
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Current Transfer Ratio
|hfe|
IC = 30mAdc, VCE = 30Vdc, f = 100MHz
2N3634, 2N3636
2N3635, 2N3637
1.5
2.0
8.0
8.5
Forward Current Transfer Ratio
hfe
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
2N3634, 2N3636
2N3635, 2N3637
40
80
160
320
Small-Signal Short-Circuit Input Impedance
hie
Ω
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
2N3634, 2N3636
2N3635, 2N3637
100
200
600
1200
Small-Signal Open-Circuit Input Impedance
hoe
200
μs
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
Output Capacitance
Cobo
10
pF
VCB = 20Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
Input Capacitance
Cibo
75
pF
VEB = 1.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz
Noise Figure
VCE = 10Vdc, IC = 0.5mAdc, Rg = 1.0kΩ
f = 100Hz
f = 1.0kHz
f = 10kHz
NF
5.0
3.0
dB
(1) Pulse Test: Pulse Width = 300
μs, Duty Cycle ≤ 2.0%
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| 2N3634 | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3634 | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3634 | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3635UB | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3637UB | 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3636 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 175V 1A 3PIN TO-39 - Bulk |
| 2N3636JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N3636L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 175V 1A 3PIN TO-5 - Bulk |
| 2N3636SX | 制造商: 功能描述: |
| 2N3636UB | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR UB LAW - Gel-pak, waffle pack, wafer, diced wafer on film |
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