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參數(shù)資料
| 型號： | 2N3635 |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 56K |
| 代理商： | 2N3635 |
Data Sheet No. 2N3635
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 A
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 A, pulsed
Collector-Base Cutoff Current
VCB = 100 V
ICBO1
---
100
nA
VCB = -100 V, TA = +150
oC
ICBO2
---
100
A
Emitter-Base Cutoff Current
VEB = 3 V
Collector-Emitter Cutoff Current
VCE = 100 V
ICEO
---
10
A
nA
V
Electrical Characteristics
TC = 25
oC unless otherwise specified
V
V(BR)CBO
140
---
IEBO
---
50
V(BR)CEO
140
---
V(BR)EBO
5.0
---
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 0.1 mA, VCE = 10 V (pulse test)
hFE1
55
---
IC = 1.0 mA, VCE = 1.0 V (pulse test)
hFE2
90
---
IC = 10 mA, VCE = 10 V (pulse test)
hFE3
100
---
IC = 50 mA, VCE = 10 V (pulse test)
hFE4
100
300
---
IC = 150 mA, VCE = 10 V (pulse test)
hFE5
60
---
IC = 50 mA, VCE = 10 V (pulsed), TA = -55
oC
hFE6
50
---
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1 mA (pulse test)
VCE(sat)1
---
0.3
V dc
IC = 50 mA, IB = 5 mA (pulse test)
VCE(sat)2
---
0.6
V dc
Base-Emitter Saturation Voltage Non Saturated
IC = 10 mA, IB = 1 mA (pulse test)
VBE(sat)1
---
0.8
V dc
IC = 50 mA, IB = 5 mA (pulse test)
VBE(sat)2
0.65
0.9
V dc
Switching Characteristics
Symbol
Min
Max
Unit
Pulse Delay Time
Per Figure 3 of MIL-S-19500/357
Pulse Rise Time
IC = 500 mA, IB1 = 50 mA, VEB = 2 V
Pulse Storage Time
IC = 500 mA, IB1 = IB2 = 50 mA
Pulse Fall Time
IC = 500 mA, IB1 = IB2 = 50 mA
t off
IC = 500 mA, IB1 = IB2 = 50 mA
toff
---
600
ns
tf
---
150
ns
ts
---
500
ns
tr
---
100
ns
td
---
100
ns
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