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參數(shù)資料
| 型號： | 2N3634CSM-QR-BG4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 15K |
| 代理商： | 2N3634CSM-QR-BG4 |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
140
5.0
50
100
40
45
50
150
25
0.3
0.5
0.8
.65
0.9
150
10
75
100
600
3.0
40
160
200
3.0
400
600
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BVCEO
Collector–Emitter Breakdown Voltage1
BVCBO
Collector – Base Breakdown Voltage
BVEBO
Emitter – Base Breakdown Voltage
IEBO
Emitter Cut-off Current
ICBO
Collector Cut-off Current
hFE
DC Current Gain
VCE(sat)
Collector – Emitter Saturation Voltage1
VBE(sat)
Base – Emitter Saturation Voltage
ft
Current Gain Bandwidth Product
Cob
Output Capacitance
Cib
Input Capacitance
hie
Input Impedance
hre
Voltage Feedback Ratio
hfe
Small Siganl Current Gain
hoe
Ourput Admittance
NF
ton
Turn–On Time
toff
Turn–Off Time
IC = 10mA
IB = 0
IC = 100mAIE = 0
IC = 0
IE = 10mA0
VBE = 3.0V
IC = 0
VCB = 100V
IE = 0
IC = 0.1mA
VCE = 10V
IC = 1mA
VCE = 10V
IC = 10mA
VCE = 10V
IC = 50mA
VCE = 10V
IC = 150mA
VCE = 10V
IC = 10mA
IB = 1mA
IC = 50mA
IB = 5mA
IC = 10mA
IB = 1mA
IC = 50mA
IB = 5mA
VCE = 30V
IC = 50mA
f = 100MHz
VCB = 20V
IE = 0
f = 100kHz
VBE = 1.0V
IC = 0
f = 100kHz
VCE = 10V
IC = 10mA
f = 1kHz
VCE = 10V
IC = 0.5mA
RS = 1.0W
f = 1kHz
VCC = 100V
VBE = 4.0V
IC = 50mA
IB1 = IB2 =5mA
V
nA
-
V
MHz
pF
W
x10-4
—
mmhos
dB
ns
OFF CHARACTERISTICS
Prelim. 2/00
2N3634CSM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300
ms ,Duty Cycle < 2%
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
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| 2N3634E1 | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3634.MOD | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3634UB | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3635UB | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3634 | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3634J | 制造商:MINNESOTA MINING AND MFG 功能描述: |
| 2N3634JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N3634L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 140V 1A 3PIN TO-5 - Bulk |
| 2N3634UB | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR UB LAW - Gel-pak, waffle pack, wafer, diced wafer on film |
| 2N3635 | 功能描述:兩極晶體管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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