參數(shù)資料
型號: 2N3584
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: 2 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-213AA
封裝: HERMETIC SEALED, METAL, TO-66, 2 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 35K
代理商: 2N3584
2N3584
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7478, ISSUE 1
ELECTRICAL CHARACTERISTICS (T
case=25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max.
Unit
V(BR)CEO*
Collector-Emitter Breakdown Voltage
IC = 10mA
250
VCE(sat)*
Collector to Emitter Saturation
Voltage
IC = 1.0A
IB = 125mA
0.75
VBE(sat)*
Base to Emitter Saturated Voltage
IC = 1.0A
IB = 100mA
1.4
VBE*
Base-Emitter Voltage
VCE = 10V
IC = 1.0A
1.4
V
ICEO
Collector Cut-Off Current
VCE = 150V
IB = 0
5.0
VCE = 340V
VBE = -1.5V
1.0
VCE = 300V
VBE = -1.5V
ICEV
Collector Cut-Off Current
TCase = 150°C
3.0
IEBO
Emitter Cut-Off Current
IC = 0
VEB = 6.0V
0.5
mA
IC = 100mA
40
IC = 1.0A
VCE = 10V
25
100
hFE*
Forward-current transfer ratio
IC = 1.0A
VCE = 2.0V
8.0
80
DYNAMIC CHARACTERISTICS
Tr
Rise Time
VCC=200V
3.0
Ts
Storage Time
IC=1.0A
4.0
Tf
Fall Time
IB1=-IB2=0.1A
3.0
s
Cob
Output Capacitance
IE = 0
VCB = 10V
f = 1.0MHz
120
pF
IC = 200mA
VCE = 10V
FT
Transition Frequency
f = 5MHz
10
MHz
* Pulse test tp = 300s, δ < 2%
THERMAL CHARACTERISTICS
Max.
Unit
Rth j-case
Thermal resistance to case
5.0
°C/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N3584 制造商:UNBRANDED 功能描述:TRANSISTOR NPN TO-66
2N3584JAN 制造商:Microsemi Corporation 功能描述:
2N3584JANTX 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 250V 2A 3-Pin(2+Tab) TO-66
2N3584JTXV 制造商: 功能描述:
2N3584X 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN