參數(shù)資料
型號(hào): 2N356
廠商: AMERICAN MICROSEMICONDUCTOR INC
元件分類: 小信號(hào)晶體管
英文描述: 500 mA, 18 V, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5
封裝: TO-5, 3 PIN
文件頁數(shù): 1/1頁
文件大小: 240K
代理商: 2N356
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2N356 Information
Category Transistors
2N356 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 18
V(BR)CBO (V) : 20
I(C) Max. (A) : 500m
Absolute Max. Power Diss. (W) : 100m
Maxim um Operating Tem p (шC) : 85ю
I(CBO) Max. (A) : 5.0u
@V(CBO) (V) (Test Condition) : 5.0
h(FE) Min. Current gain. : 20
h(FE) Max. Current gain. : 50
@I(C) (A) (Test Condition) : 100m
@V(CE) (V) (Test Condition) : 250m
h(fe) Min. SS Current gain. : 30В
@I(C) (A) (Test Condition) : 1.0m
@V(CE) (V) (Test Condition) : 5.0
@Freq. (Hz) (Test Condition) :
f(T) Min. (Hz) Transition Freq : 3.0MВ
@I(C) (A) (Test Condition) : 1.0m
@V(CE) (V) (Test Condition) : 5.0
C(obo) (Max) (F) : 14pВ
@V(CB) (V) (Test Condition) : 5.0
@Freq. (Hz) (Test Condition) : 1.0M
Package Style : TO-5
Mounting Style : T
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2N356 500 mA, 18 V, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5
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