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參數(shù)資料
| 型號： | 2N3565 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN General Purpose Amplifier |
| 中文描述： | NPN, Si, SMALL SIGNAL TRANSISTOR, TO-106 |
| 封裝： | TO-106, 4 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | 2N3565 |
P
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 2.0 mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 25 V, I
E
= 0
25
30
6.0
V
V
V
nA
50
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE(
sat
)
Collector-Emitter Saturation Voltage
V
CE
= 10 V, I
C
= 1.0 mA
I
C
= 1.0 mA, I
B
= 0.1 mA
150
600
0.35
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Impedance
C
ob
h
ie
V
CB
= 5.0 V
I
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
I
C
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
I
= 1.0 mA, V
CE
= 5.0 V,
f = 20 MHz
I
C
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
4.0
20
pF
k
2.0
h
oe
Output Admittance
0.5
35
μ
mhos
h
fe
Small-Signal Current Gain
2.0
120
12
750
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
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