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參數(shù)資料
| 型號： | 2N3553 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | silicon transistors UHF/VHF power transistors |
| 中文描述： | 硅晶體管的超高頻/甚高頻功率晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2N3553 |
1995 Oct 27
3
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
open emitter
I
C
≤
200 mA; V
BE
=
1.5 V
open base; I
C
≤
200 mA
open collector
65
65
65
40
4
0.35
1
7
+200
200
V
V
V
V
A
A
W
°
C
°
C
up to T
mb
= 25
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
25
K/W
Fig.2 DC SOAR.
(1) All frequencies, including DC.
(2) f
≥
1 MHz.
(3) Allowed during switching off, provided the transistor is cut-off
with V
BB
≤
1.5 V; R
BE
≥
33
; I
C
≤
200 mA and the transient
energy
≤
0.5 mW.
handbook, halfpage
MGC928
10
1
10
2
1
10
-2
10
-1
VCE (V)
IC
(A)
(1)
(2)
(3)
Fig.3 Power derating curve.
handbook, halfpage
0
Ptot
(W)
5
0
100
200
Tmb (
o
C)
MGC927
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3565 | NPN General Purpose Amplifier |
| 2N3570 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2N3654 | 35-A SILICON CONTROLLED RECTIFIERS |
| 2N3655 | 35-A SILICON CONTROLLED RECTIFIERS |
| 2N3656 | 35-A SILICON CONTROLLED RECTIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3554 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| 2N3558 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package |
| 2N356 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 500MA I(C) | TO-5 |
| 2N3562 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SCR, V(DRM) = 200V TO 299.9V |
| 2N3563 | 制造商:Distributed By MCM 功能描述:30V .05A .20W Ebc Transistor TO-106 NPN |
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