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參數(shù)資料
| 型號： | 2N3553 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon planar epitaxial overlay transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2N3553 |
1995 Oct 27
4
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Pulsed through an inductor of 25 mH;
δ
= 0.5; f = 50 Hz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
V
(BR)CEO
collector-base breakdown voltage
collector-emitter breakdown voltage
open emitter; I
C
= 0.25 mA
open base; I
C
up to 200 mA;
note 1
I
C
up to 200 mA; V
BE
=
1.5 V;
R
B
= 33
; note 1
open collector; I
E
= 0.25 mA
I
C
= 250 mA; V
CE
= 5 V
I
C
= 250 mA; I
B
= 50 mA
open base; V
CE
= 30 V
V
CE
= 5 V; I
C
= 125 mA
V
CE
= 5 V; I
C
= 250 mA
I
C
= 125 mA; V
CE
= 28 V
I
C
= 125 mA; V
CE
= 28 V;
f = 200 MHz
V
CB
= 28 V; I
E
= i
e
= 0;
f = 1 MHz
65
40
V
V
V
(BR)CEX
collector-emitter breakdown voltage
65
V
V
(BR)EBO
V
BE
V
CEsat
I
CEO
h
FE
emitter-base breakdown voltage
base-emitter voltage
collector-emitter saturation voltage
collector leakage current
DC current gain
4
15
10
500
1.5
1.0
0.1
200
100
20
V
V
V
mA
f
T
Rho
ie
)
transition frequency
real part of input impedance
MHz
C
c
collector capacitance
10
pF
Fig.4
DC current gain as a function of collector
current; typical values.
handbook, halfpage
0
100
200
300
400
hFE
20
0
40
MGC935
500
IC (mA)
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
5
15
10
0
20
40
60
(pF)
VCB (V)
MGC930
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|---|---|
| 2N3554 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| 2N3558 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package |
| 2N356 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 500MA I(C) | TO-5 |
| 2N3562 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SCR, V(DRM) = 200V TO 299.9V |
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