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參數(shù)資料
| 型號： | 2N3507A |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 102K |
| 代理商： | 2N3507A |
2N3507A
Silicon NPN Transistor
Dat a Sheet
Description
SEMICOA offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3507AJ)
JANTX level (2N3507AJX)
JANTXV level (2N3507AJV)
JANS level (2N3507AJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact SEMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose switching transistor
Low power
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 1506
Reference document:
MIL-PRF-19500/349
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
50
Volts
Collector-Base Voltage
VCBO
80
Volts
Emitter-Base Voltage
VEBO
5
Volts
Collector Current, Continuous
IC
3
A
Power Dissipation, TA = 25
OC
Derate linearly above 25
OC
PT
1
5.71
W
mW/
°C
Power Dissipation, TC = 25
OC
Derate linearly above 25
OC
PT
5
28.6
W
mW/
°C
Thermal Resistance
RθJA
175
°C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200
°C
Copyright
2007
SEMICOA
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3507AJANS | 制造商:Semicoa Semiconductors 功能描述:2N3507AJS |
| 2N3507AL | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 3A 3PIN TO-5 - Bulk |
| 2N3507AU4 | 功能描述:NPN TRANSISTOR 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/349 包裝:散裝 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:3A 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 250mA，2.5A 電流 - 集電極截止（最大值）:1μA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:30 @ 1.5A，2V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應商器件封裝:U4 標準包裝:1 |
| 2N3507JAN | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 3A 3-Pin TO-39 |
| 2N3507JANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 50V 3A 3-Pin TO-39 |
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