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參數(shù)資料
| 型號(hào)： | 2N3506LJS |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 414K |
| 代理商： | 2N3506LJS |
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3506L
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 100 A
60
Volts
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
40
Volts
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10 A
5
Volts
Collector-Emitter Cutoff Current
ICEX1
VCE = 40 Volts, VEB = 4 Volts
1
A
Collector-Emitter Cutoff Current
ICEX2
VCE = 40 Volts, VEB = 4 Volts,
TA = 150°C
1.5
mA
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 500 mA, VCE = 1 Volts
IC = 1.5 A, VCE = 2 Volts
IC = 2.5 A, VCE = 3 Volts
IC = 3.0 A, VCE = 5 Volts
IC = 500 mA, VCE = 1 Volts
TA = -55°C
50
40
30
25
250
200
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
VBEsat3
IC = 500 mA, IB = 50 mA
IC = 1.5 A, IB = 150 mA
IC = 2.5 A, IB = 250 mA
0.5
1.0
1.5
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
VCEsat3
IC = 500 mA, IB = 50 mA
IC = 1.5 A, IB = 150 mA
IC = 2.5 A, IB = 250 mA
0.8
1.0
1.3
2.0
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 5 Volts, IC = 100 mA,
f = 20 MHz
3
15
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
40
pF
Open Circuit Input Capacitance
CIBO
VEB = 3 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
300
pF
Delay Time
td
IC = 1.5 A, IB1 = 150 mA
15
ns
Rise Time
tr
IC = 1.5 A, IB1 = 150 mA
30
ns
Switching Characteristics
Storage Time
ts
IC = 1.5 A, IB1=IB2 = 150 mA
55
ns
Fall Time
tf
IC = 1.5 A, IB1=IB2 = 150 mA
35
ns
Semicoa Corporation
Copyright
2010
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