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參數(shù)資料
| 型號(hào)： | 2N3501L |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Type 2N3501L Geometry 5620 Polarity NPN |
| 中文描述： | 類(lèi)型2N3501L幾何5620極性npn型 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | 2N3501L |
Type 2N3501L
Geometry
5620
Polarity NPN
Qual Level: JAN - JANS
Data S heet No. 2N3501L
Generic Part Number:
2N3500L
REF: MIL-PRF-19500/366
Features:
General-purpose silicon transistor
for switching and amplifier appli-
cations.
Housed in
TO-5
case.
Also available in chip form using
the
5620
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/366
which
Semicoa meets in all cases.
Rating
Symbol
Rating
Unit
Collector-Emitter voltage
V
CEO
150
V
Collector-Base Voltage
V
CBO
150
V
Emitter-Base voltage
V
EBO
6.0
V
Collector Current, Continuous
I
C
300
mA
Power Dissipation, T
A
= 25
o
C
5.0
mW
Derate above 25
o
C
28.8
mW/
o
C
Operating Junction Temperature
T
J
-65 to +200
o
C
Storage Temperature
T
STG
-65 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
P
D
TO-5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3501UB | Silicon NPN Transistor |
| 2N3502 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N3502 | PNP Silicon Planar Epitaxial Transistor(PNP外延平面硅晶體管) |
| 2N3503 | PNP Silicon Planar Epitaxial Transistor(PNP外延平面硅晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3501LJANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin TO-5 |
| 2N3501TV | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 115V V(BR)CEO | 50MA I(C) | TO-39 |
| 2N3501UB | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin SMD |
| 2N3501UBJANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin CSOT-23 |
| 2N3501UBJANSR | 制造商:Microsemi Corporation 功能描述: |
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