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參數(shù)資料
| 型號(hào)： | 2N3468 |
| 廠(chǎng)商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Small Signal Transistors |
| 中文描述： | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | 2N3468 |
Data S heet No. 2N3468
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 μA, pulsed
Collector-Base Cutoff Current
V
CB
= 30 V
V
CB
= 30 V, T
A
= +150
o
C
Collector-Emitter Cutoff Current
V
EB
= 3.0 V, V
CE
= 30 V
ON Characteristics
Forward current Transfer Ratio
I
C
= 150 mA, V
CE
= 1.0 V (pulse test)
I
C
= 500 mA, V
CE
= 1.0 V (pulse test)
I
C
= 1.0 A, V
CE
= 5 V (pulse test)
I
C
= 150 mA, V
CE
= 1.0 V (pulse test), T = -55
o
C
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
Symbol
Min
Max
Unit
I
CBO1
I
CBO2
---
---
100
50
nA
μA
---
100
V
(BR)CEO
50
---
V
(BR)EBO
5.0
---
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
50
---
I
CEX
Symbol
Min
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
25
25
25
10
---
75
---
---
---
---
---
---
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
---
---
---
0.35
0.6
1.2
V dc
V dc
V dc
V
BE(sat)1
V
BE(sat)2
V
BE(sat)3
---
0.8
---
1.0
1.2
1.6
V dc
V dc
V dc
Small Signal Characteristics
Extrapolated Unity Gain Frequency
V
CE
= 10 V, I
C
= 50 mA, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Symbol
Min
Max
Unit
C
IBO
---
100
pF
pF
C
OBO
---
25
MHz
f
t
150
500
Switching Characteristics
Delay Time
I
C
= 500 mA, I
B1
= 50 mA, V
EB
= 2 V
Rise Time
I
C
= 500 mA, I
B1
= 50 mA, V
EB
= 2 V
Storage Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
Fall Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
Symbol
Min
Max
Unit
ns
t
d
---
10
t
r
---
30
ns
t
s
---
60
ns
t
f
---
30
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2N3468A | 制造商: 功能描述: |
| 2N3468L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 50V 1A 3PIN TO-5 - Bulk |
| 2N3469 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 25V 5A 3PIN TO-5 - Bulk |
| 2N3470 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-5/16 |
| 2N3471 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 |
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