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參數(shù)資料
| 型號： | 2N3467L |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 2N3467L |
2N3467, L, 2N3468, L, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC =150 mAdc, VCE = 1.0 Vdc
2N3467, L
2N3468, L
IC = 500 mAdc, VCE = 1.0 Vdc
2N3467, L
2N3468, L
IC = 1.0 Adc, VCE = 5.0 Vdc
2N3467, L
2N3468, L
hFE
40
25
40
25
40
25
120
75
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
VCE(sat)
0.35
0.6
1.2
Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
VBE(sat)
0.8
1.0
1.2
1.6
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
25
pF
Extrapolated Unity Gain Frequency
IC = 50 mAdc, VCE = 10 Vdc, f = 100NHz
2N3467, L
2N3468, L
ft
175
150
500
MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
100
pF
SWITCHING CHARACTERISTICS
Delay Time
IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2
td
10
ns
Rise Time
IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2
tr
30
ns
Storage Time
IC = 500 mAdc, IB1 = IB2 = 50 mAdc
ts
60
ns
Fall Time
IC = 100 mAdc, IB1 = IB2 = 50 mAdc
tf
30
ns
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3467 | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3468L | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3468 | 1000 mA, 5 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N4918 | 1 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 2N3471 | 10 A, 100 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3468 | 功能描述:兩極晶體管 - BJT PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3468A | 制造商: 功能描述: |
| 2N3468L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 50V 1A 3PIN TO-5 - Bulk |
| 2N3469 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 25V 5A 3PIN TO-5 - Bulk |
| 2N3470 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-5/16 |
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