參數資料
型號: 2N3467L
廠商: Semicoa Semiconductor
英文描述: Type 2N3467L Geometry 6706 Polarity PNP
中文描述: 類型2N3467L幾何6706極性進步黨
文件頁數: 2/2頁
文件大?。?/td> 83K
代理商: 2N3467L
Data S heet No. 2N3467L
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 μA, pulsed
Collector-Base Cutoff Current
V
CB
= 30 V
V
CB
= 30 V, T
A
= +150
o
C
Collector-Emitter Cutoff Current
V
EB
= 3.0 V, V
CE
= 30 V
Symbol
Min
Max
Unit
I
CBO1
I
CBO2
---
---
100
50
nA
μA
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
40
---
I
CEX
---
100
V
(BR)CEO
40
---
V
(BR)EBO
5.0
---
ON Characteristics
Forward current Transfer Ratio
I
C
= 150 mA, V
CE
= 1.0 V (pulse test)
I
C
= 500 mA, V
CE
= 1.0 V (pulse test)
I
C
= 1.0 A, V
CE
= 5 V (pulse test)
I
C
= 150 mA, V
CE
= 1.0 V (pulse test), T = -55
o
C
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
Min
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
40
40
40
16
---
120
---
---
---
---
---
---
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
---
---
---
0.35
0.6
1.2
V dc
V dc
V dc
V
BE(sat)1
V
BE(sat)2
V
BE(sat)3
---
0.8
---
1.0
1.2
1.6
V dc
V dc
V dc
Small Signal Characteristics
Extrapolated Unity Gain Frequency
V
CE
= 10 V, I
C
= 50 mA, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Symbol
Min
Max
Unit
MHz
f
t
175
500
pF
C
OBO
---
25
C
IBO
---
100
pF
Switching Characteristics
Delay Time
I
C
= 500 mA, I
B1
= 50 mA, V
EB
= 2 V
Rise Time
I
C
= 500 mA, I
B1
= 50 mA, V
EB
= 2 V
Storage Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
Fall Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
Symbol
Min
Max
Unit
ns
t
d
---
10
t
r
---
30
ns
t
s
---
60
ns
t
f
---
30
ns
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