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參數(shù)資料
| 型號： | 2N3467 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 2N3467 |
2N3467, L, 2N3468, L, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC =150 mAdc, VCE = 1.0 Vdc
2N3467, L
2N3468, L
IC = 500 mAdc, VCE = 1.0 Vdc
2N3467, L
2N3468, L
IC = 1.0 Adc, VCE = 5.0 Vdc
2N3467, L
2N3468, L
hFE
40
25
40
25
40
25
120
75
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
VCE(sat)
0.35
0.6
1.2
Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
VBE(sat)
0.8
1.0
1.2
1.6
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
25
pF
Extrapolated Unity Gain Frequency
IC = 50 mAdc, VCE = 10 Vdc, f = 100NHz
2N3467, L
2N3468, L
ft
175
150
500
MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
100
pF
SWITCHING CHARACTERISTICS
Delay Time
IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2
td
10
ns
Rise Time
IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2
tr
30
ns
Storage Time
IC = 500 mAdc, IB1 = IB2 = 50 mAdc
ts
60
ns
Fall Time
IC = 100 mAdc, IB1 = IB2 = 50 mAdc
tf
30
ns
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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