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參數(shù)資料
| 型號： | 2N3442 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon Power Transistor(10A,140V（集電極-發(fā)射極）,117W，硅NPN功率晶體管) |
| 中文描述： | 10 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 58K |
| 代理商： | 2N3442 |
2N3442
http://onsemi.com
3
ACTIVE REGION SAFE OPERATING AREA INFORMATION
There are two limitations on the power–handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 200 C; T
C
is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power that can be han-
dled to values less than the limitations imposed by second
breakdown.
20
2.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.2
5.0
20
100
200
I
CURRENT LIMIT
THERMAL LIMIT @ T
C
= 25
°
C
SINGLE PULSE
SECOND BREAKDOWN LIMIT
dc
1.0 ms
10
μ
s
0.3
3.0
7.0
10
30
50
70
30
μ
s
50
μ
s
100
μ
s
T
J
= 200
°
C
100 ms
Figure 2. 2N3442
V
400
0.1
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
4.0
0.2
0.3
0.5
0.7 1.0
2.0
3.0
5.0
10
40
20
100
60
h
T
J
= 150
°
C
25
°
C
-55
°
C
V
CE
= 4.0 V
6.0
10
200
7.0
Figure 4. Collector–Saturation Region
1.4
2.0
I
B
, BASE CURRENT (mA)
0
5.0
10
20
50
100
200
500
1.0k 2.0k
1.0
0.8
0.6
0.4
I
C
= 1.0 A
T
J
= 25
°
C
4.0 A
8.0 A
1.2
0.2
2.0 A
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3442 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 |
| 2N3442/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High-Power Industrial Transistors |
| 2N3442_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:HIGH POWER INDUSTRIAL TRANSISTORS |
| 2N3442G | 功能描述:兩極晶體管 - BJT 10A 140V 117W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3444 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
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