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參數(shù)資料
| 型號： | 2N3440.MODG4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 2N3440.MODG4 |
2N3439
2N3440
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 3066
Issue: 1
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IC = 50mA
2N3439
IC = 50mA
2N3440
VCE = 300V
2N3439
VCE = 200V
2N3440
VCE = 450V
2N3439
VCE = 300V
2N3440
VCB = 350V
2N3439
VCB = 250V
2N3440
VEB = 6V
IC = 50mA
IB = 4mA
IC = 50mA
IB = 4mA
IC = 20mA
VCE = 10V
IC = 2mA
VCE = 10V
VCEO(sus)* Collector – Emitter Sustaining Voltage
(IB = 0)
ICEO
Collector Cut-off Current
(IB = 0)
ICEX
Collector Cut-off Current
(VBE = -1.5V)
ICBO
Collector – Base Cut-off Current
(IE = 0)
IEBO
Emitter Cut-off Current (IC = 0)
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
fT
Transition Frequency
Cob
Output Capacitance
hfe
Small Signal Current Gain
IC = 10mA
VCE = 10V
f = 5MHz
VCB = 10V
f = 1MHz
IC = 5mA
VCE = 10V
f = 1kHz
15
10
25
MHz
pF
—
* Pulse test tp = 300s , δ ≤ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
350
250
20
50
500
20
0.5
1.3
40
160
30
V
A
V
—
2N3439 only
THERMAL DATA
Parameter
Min.
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction to Ambient
175
°C/W
RθJC
Thermal Resistance Junction to Case
35
°C/W
相關(guān)PDF資料 |
PDF描述 |
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| 2N3439G4 | 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3440G4 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3440SE4 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 2N3440 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3440 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3440S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-39 |
| 2N3440UA | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN LOW POWER SILICON TRANSISTOR |
| 2N3441 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 3A 3PIN TO-66 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:BJT, NPN, 140V, 3A, TO-66; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Power Dissipation Pd:25W; DC Collector Current:3A; DC Current Gain hFE:100; Operating Temperature Min:-65C; Operating Temperature Max:200C;RoHS Compliant: Yes |
| 2N3442 | 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3442 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 |
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