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參數(shù)資料
| 型號(hào)： | 2N3439G4 |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | 2N3439G4 |
2N3439
2N3440
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 3066
Issue: 1
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IC = 50mA
2N3439
IC = 50mA
2N3440
VCE = 300V
2N3439
VCE = 200V
2N3440
VCE = 450V
2N3439
VCE = 300V
2N3440
VCB = 350V
2N3439
VCB = 250V
2N3440
VEB = 6V
IC = 50mA
IB = 4mA
IC = 50mA
IB = 4mA
IC = 20mA
VCE = 10V
IC = 2mA
VCE = 10V
VCEO(sus)* Collector – Emitter Sustaining Voltage
(IB = 0)
ICEO
Collector Cut-off Current
(IB = 0)
ICEX
Collector Cut-off Current
(VBE = -1.5V)
ICBO
Collector – Base Cut-off Current
(IE = 0)
IEBO
Emitter Cut-off Current (IC = 0)
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
fT
Transition Frequency
Cob
Output Capacitance
hfe
Small Signal Current Gain
IC = 10mA
VCE = 10V
f = 5MHz
VCB = 10V
f = 1MHz
IC = 5mA
VCE = 10V
f = 1kHz
15
10
25
MHz
pF
—
* Pulse test tp = 300s , δ ≤ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
350
250
20
50
500
20
0.5
1.3
40
160
30
V
A
V
—
2N3439 only
THERMAL DATA
Parameter
Min.
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction to Ambient
175
°C/W
RθJC
Thermal Resistance Junction to Case
35
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3440G4 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3440SE4 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 2N3440 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3440 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3441 | 3 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-66 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3439JAN | 制造商:Microsemi Corporation 功能描述: |
| 2N3439JANTX | 制造商:NES 功能描述: 制造商:Microsemi Corporation 功能描述: 制造商: 功能描述: 制造商:EVANS & SUTHERLAND CM 功能描述: 制造商:undefined 功能描述: |
| 2N3439JTX | 制造商:EVANS & SUTHERLAND CM 功能描述: |
| 2N3439JX | 制造商:Motorola 功能描述:2N3439 MOT'86 N10D9I 制造商:EVANS & SUTHERLAND CM 功能描述: |
| 2N3439L | 制造商:Microsemi Corporation 功能描述:TRANS NPN 350V 1A TO-5 |
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