參數(shù)資料
型號： 2N3439
廠商： Continental Device India Limited
英文描述： NPN HIGH VOLTAGE SILICON TRANSISTORS
中文描述： npn型高壓硅晶體管
文件頁數(shù)： 2/2頁
文件大?。?/td> 18K
代理商： 2N3439
Parameter
Collector – Emitter Sustaining Voltage
(I
B
= 0)
Collector Cut-off Current
(I
B
= 0)
Collector Cut-off Current
(V
BE
= -1.5V)
Collector – Base Cut-off Current
(I
E
= 0)
Emitter Cut-off Current (I
C
= 0)
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Test Conditions
I
C
= 50mA
I
C
= 50mA
V
CE
= 300V
V
CE
= 200V
V
CE
= 450V
V
CE
= 300V
V
CB
= 350V
V
CB
= 250V
V
EB
= 6V
I
C
= 50mA
I
C
= 50mA
I
C
= 20mA
V
CE
= 10V
I
C
= 2mA
V
CE
= 10V
Min.
350
250
Typ.
Max.
Unit
2N3439
2N3440
2N3439
2N3440
2N3439
2N3440
2N3439
2N3440
I
B
= 4mA
I
B
= 4mA
V
CEO(sus)*
I
CEO
I
CEX
I
CBO
I
EBO
V
CE(sat)*
V
BE(sat)*
h
FE*
DC Current Gain
2N3439
2N3440
Prelim.12/99
Parameter
Transition Frequency
Output Capacitance
Small Signal Current Gain
Test Conditions
I
C
= 10mA
V
CB
= 10V
I
C
= 5mA
V
CE
= 10V
Min.
15
Typ.
Max.
Unit
MHz
pF
—
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
f
T
C
ob
hfe
V
CE
= 10V
f = 5MHz
f = 1MHz
f = 1kHz
10
25
* Pulse test t
p
= 300
m
s ,
d ￡
2%
DYNAMIC CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
20
50
500
500
20
20
20
0.5
1.3
40
160
30
V
m
A
μA
μA
μA
V
V
—
—
2N3439 only
Semelab plc.
Telephone +44(0)1455 556565.
E-mail:
sales@semelab.co.uk
Fax +44(0)1455 552612.
Website:
THERMAL DATA
相關(guān)PDF資料
PDF描述
2N3440 NPN HIGH VOLTAGE SILICON TRANSISTORS
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2N3440 HIGH VOLTAGE AMPLIFIERS
2N3439 Four Wall Header; No. of Contacts:14; Pitch Spacing:0.1"; No. of Rows:2; Gender:Header; Body Material:Glass-filled Polyester; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:Through Hole RoHS Compliant: No
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2N3439_00 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON NPN TRANSISTORS
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2N3439A 制造商:UNKNOWN 功能描述:
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