- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49836 > 2N3421S (MICROSEMI CORP-LAWRENCE) 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N3421S |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 57K |
| 代理商： | 2N3421S |
2N3418, S, 2N3419, S, 2N3420, S, 2N3421, S, JAN SERIES
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 100 mAdc, VCE = 2.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
IC = 1.0 Adc, VCE = 2.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
IC = 2.0 Adc, VCE = 2.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
IC = 5.0 Adc, VCE = 5.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
hFE
20
40
20
40
15
30
10
15
60
120
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.2 Adc
VBE(sat)
0.6
0.7
1.2
1.4
Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.2 Adc
VCE(sat)
0.25
0.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz
h
fe
1.3
8.0
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
150
pF
SWITCHING CHARACTERISTICS
Delay Time
VBE(off) = -3.7 Vdc
td
0.08
s
Rise Time
IC = 1.0 Adc, IB1 = 100 mAdc
tr
0.22
s
Storage Time
VBE(off) = -3.7 Vdc
ts
1.10
s
Fall Time
IC = 1.0 Adc, IB2 = -100 mAdc
tf
0.20
s
SAFE OPERATING AREA
DC Tests
TC = 100
0C, 1 Cycle, t = 1.0 s
Test 1
VCE = 5.0 Vdc, IC = 3.0 Adc
Test 2
VCE = 37 Vdc, IC = 0.4 Adc
TEST 3
VCE = 60 Vdc, IC = 0.185 Adc
2N3418, S; 2N3420, S
VCE = 80 Vdc, IC = 0.12 Adc
2N3419, S; 2N3421, S
Clamped Switching
TA = 25
0C, I
B = 0.5 Adc, IC = 3.0 Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3440 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3583 | 1 A, 175 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N4297 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N3440 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3440 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-5 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3421SJAN | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3421SJANTX | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3421SJANTXV | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3421SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N3421SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。