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參數(shù)資料
| 型號(hào)： | 2N3416-BP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | 2N3416-BP |
2N3416
NPN General
Purpose Amplifier
Features
Maximum Ratings*
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
50
V
VCBO
Collector-Base Voltage
50
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, Continuous
500
mA
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25
OC
625
5.0
mW
mW/
OC
RJC
Thermal Resistance, Junction to Case
83.3
OC/W
RJA
Thermal Resistance, Junction to Ambient
200
OC/W
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0)
50
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10ì Adc, IE=0)
50
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10ì Adc, IC=0)
5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=25Vdc, IE=0.4Vdc)
(VCB=18Vdc, IE=0, TA=100
OC)
---
100
15
nAdc
uAdc
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
100
nAdc
* These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
Notes: 1. These ratings are based on a maximum junction temperature of 150
degrees C.
2. These are steady state limits. The factory should be consulted on
applications involving pulsed or low duty cycle operations.
This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 300mA
TO-92
AE
B
C
D
G
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: 3
2006/05/16
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
TM
Micro Commercial Components
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
Marking: Type Number
www.mccsemi.com
1 of 3
B
CE
Pin Configuration
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3417 | 功能描述:兩極晶體管 - BJT NPN 50V 500mA BULK HFE/540 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3417 APM | 功能描述:THROUGH-HOLE TRANSISTOR-SMALL SI 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:500mA 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:300mV @ 3mA，50mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:180 @ 2mA，4.5V 功率 - 最大值:1.5W 頻率 - 躍遷:- 工作溫度:-65°C ~ 150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-226-3，TO-92-3 標(biāo)準(zhǔn)主體（!--TO-226AA） 供應(yīng)商器件封裝:TO-92 標(biāo)準(zhǔn)包裝:2,000 |
| 2N3417"D75Z | 制造商:Fairchild Semiconductor Corporation 功能描述:RF TRANSISTOR NPN 50V TO-92 |
| 2N3417 | 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor |
| 2N3417/D89Z | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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