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參數(shù)資料
| 型號： | 2N3251A |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封裝： | TO-18, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 219K |
| 代理商： | 2N3251A |
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2N3251A Information
Category Transistors
Class Transistors; Bipolar; Si PNP Low-Pwr HF
Type Bipolar; Si PNP Low-Power High Frequency
2N3251A Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 200m
Absolute Max. Power Diss. (W) : 360m
Maximum Operating Temp (шC) : 175х
I(CBO) Max. (A) : 20nШч
@V(CBO) (V) (Test Condition) :
h(FE) Min. Current gain. : 100
h(FE) Max. Current gain. : 300
@I(C) (A) (Test Condition) : 10m
@V(CE) (V) (Test Condition) : 1.0
f(T) Min. (Hz) Transition Freq : 300M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
V(CE)sat Max. (V) : 250m
@I(C) (A) (Test Condition) : 10m
@I(B) (A) (Test Condition) : 1.0m
h(fe) Min. SS Current gain. : 100у
@I(C) (A) (Test Condition) : 10m
@V(CE) (V) (Test Condition) : 1.0
@Freq. (Hz) (Test Condition) :
t(d) Max. (s) Delay time. : 35n
t(r) Max. (s) Rise time : 35n
t(on) Max. (s) On time. :
t(s) Max. (s) Storage time. : 200n
t(f) Max. (s) Fall time. : 50n
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Page 1 of 2
2N3251A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integ...
12-Apr-2011
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N3251A
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| 2N3250 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N2907 | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3251ASX | 制造商:MILITARY SPECIFICATIONS P 功能描述: 制造商:Motorola Inc 功能描述: |
| 2N3251AUB | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON LOW POWER TRANSISTOR |
| 2N3251CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
| 2N3251DCSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 200MA I(C) | LLCC |
| 2N3251JTXMOT85 | 制造商:Motorola 功能描述:2N3251JANTX |
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