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參數(shù)資料
| 型號(hào)： | 2N3250A |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | 2N3250A |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0093 Rev. 2 (101243)
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERTICS
(2)
Forward-Current Transfer Ratio
hFE
IC = 0.1mAdc, VCE = 1.0Vdc
2N3250A, AUB
2N3251A, AUB
40
80
IC = 1.0mAdc, VCE = 1.0Vdc
2N3250A, AUB
2N3251A, AUB
45
90
IC = 10mAdc, VCE = 1.0Vdc
2N3250A, AUB
2N3251A, AUB
50
100
150
300
IC = 50mAdc, VCE = 1.0Vdc
2N3250A, AUB
2N3251A, AUB
15
30
IC = 1.0mAdc, VCE = 1.0Vdc
TA = -55°C
2N3250A, AUB
2N3251A, AUB
20
40
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
0.25
0.50
Base-Emitter Saturation Voltage
VBE(sat)
Vdc
IC = 10mA, IB = 1.0mAdc
IC = 50mA, IB = 5.0mAdc
0.60
0.90
1.20
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short-Circuit Forward Current Transfer Ratio
hfe
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N3250A, AUB
2N3251A, AUB
50
100
200
400
Magnitude of Common Emitter Small-Signal Short-Circuit Forward
Current Transfer Ratio
|hfe|
IC = 10mAdc, VCE = 20Vdc, f = 100kHz
2N3250A, AUB
2N3251A, AUB
2.5
3.0
9.0
Output Capacitance
Cobo
pF
VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
6.0
Input Capacitance
Cibo
pF
VEB = 1.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz
8.0
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
ton
VCC = 3.0Vdc; IC = 10mAdc; IB1 = 1.0mAdc
70
ηs
Turn-Off Time
toff
ηs
VCC = 3.0Vdc; IC = 10mAdc; IB1 = IB2 =
1.0mAdc
2N3250A, AUB
2N3251A, AUB
250
300
(2) Pulse Test: Pulse Width = 300
μs, Duty Cycle ≤ 2.0%
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| 2N3250A | 200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 2N3251A | 200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 2N3250X | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
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| 2N3251A | 200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3250A_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON LOW POWER TRANSISTOR |
| 2N3250AUB | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON LOW POWER TRANSISTOR |
| 2N3250CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 2N3250DCSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 200MA I(C) | LLCC |
| 2N3250X | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO18 |
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