參數(shù)資料
型號: 2N3057A
廠商: MICROSEMI CORP
元件分類: 小信號晶體管
英文描述: LOW POWER NPN SILICON TRANSISTOR
中文描述: 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-46
文件頁數(shù): 2/2頁
文件大小: 45K
代理商: 2N3057A
Data S heet No. 2N3057A
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 100 μA
Collector-Emitter Breakdown Voltage
I
C
= 30 mA
Emitter-Base Breakdown Voltage
I
E
= 100 μA
Collector-Emitter Cutoff Current
V
CE
= 90 V
Emitter-Base Cutoff Current
V
EB
= 5 V
Symbol
Min
Max
Unit
I
CES
---
10
I
EBO
---
10
V
(BR)CEO
80
---
V
(BR)EBO
7.0
---
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
nA
V
(BR)CBO
140
---
ON Characteristics
DC Current Gain
I
C
= 150 mA, V
CE
= 10 V
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V (pulse test)
I
C
= 500 mA, V
CE
= 10 V (pulse test)
I
C
= 1 A, V
CE
= 10 V (pulse test)
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
Symbol
Min
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
100
50
90
50
15
300
200
---
200
---
---
---
---
---
---
V
CE(sat)1
V
CE(sat)2
---
---
0.2
0.5
V dc
V dc
V
BE(sat)
---
1.1
V dc
Small Signal Characteristics
Short Circuit Forward Current Transfer Ratio
I
C
= 1 mA, V
CE
= 5 V, f = 1 kHz
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
V
CE
= 10 V, I
C
= 50 mA, f = 200 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 2.0 V, I
C
= 0, 100 kHz < f < 1 MHz
Collecor-Base Time Constant
V
CE
= 10 V, I
C
= 10 mA, f = 79.8 MHz
Noise Figure
V
CE
= 10 V, I
C
= 100 μA, R
g
= 1 kOhm
Symbol
Min
Max
Unit
ps
dB
20
---
C
IBO
---
60
pF
pF
r
b'
C
C
---
C
OBO
---
12
NF
---
4
400
---
|h
FE
|
5.0
AC h
FE
80
400
Switching Characteristics
Pulse Response
15 ns, 50 ohm input pulse
Symbol
Min
Max
Unit
ns
t
ON+
t
OFF
---
30
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