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參數(shù)資料
| 型號(hào)： | 2N3055HG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 112K |
| 代理商： | 2N3055HG |
2N3055, MJ2955
http://onsemi.com
36
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
*OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
60
Vdc
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, RBE = 100 W)
VCER(sus)
70
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ICEO
0.7
mAdc
Collector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
ICEX
1.0
5.0
mAdc
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
5.0
mAdc
*ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
70
CollectorEmitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
1.1
3.0
Vdc
BaseEmitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.5
Vdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)
Is/b
2.87
Adc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.5
MHz
*SmallSignal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
15
120
*SmallSignal Current Gain Cutoff Frequency
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
fhfe
10
kHz
*Indicates Within JEDEC Registration. (2N3055)
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
20
6
Figure 2. Active Region Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
6
4
2
1
0.6
0.4
0.2
10
20
40
60
I C
,COLLECT
OR
CURRENT
(AMP)
dc
500
ms
1 ms
250
ms
50
ms
BONDING WIRE LIMIT
THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25°C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.
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