參數(shù)資料
型號(hào): 2N3055-BP
廠商: MICRO COMMERCIAL COMPONENTS
元件分類: 功率晶體管
英文描述: 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
封裝: TO-3, 2 PIN
文件頁數(shù): 2/2頁
文件大小: 62K
代理商: 2N3055-BP
MCC
Revision: 4
2006/07/17
TM
www.mccsemi.com
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相關(guān)PDF資料
PDF描述
2N3055A 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
2N3055ESMD 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB
2N3055ESMD.MOD 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB
2N3055ESMDR4 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB
2N3055E 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N3055C 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:N-P-N SILICON POWER TRANSISTOR
2N3055E 制造商:TT Electronics / Semelab 功能描述:NPN power transistor,15A 2N3055E
2N3055ESMD 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed
2N3055G 功能描述:兩極晶體管 - BJT NPN 15A 60V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3055H 功能描述:兩極晶體管 - BJT 15A 60V 115W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2