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參數(shù)資料
| 型號(hào)： | 2N3053E4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 700 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-205AD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2N3053E4 |
Document Number 3065
Issue 1
2N3053
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
MEDIUM POWER SILICON
NPN PLANAR TRANSISTOR
FEATURES
VCEO = 40V
IC
= 0.7A
Ptot = 5W
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage
VCER
Collector – Emitter Sustaining Voltage
VCEX
Collector - Emiiter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
PTOT
Power Dissipation Tamb = 25°C
Tcase = 25°C
Tj
Junction Temperature
Tstg
Storage Temperature
Rth(jc)
Thermal Resistance Junction to Case
Rth(ja)
Thermal Resistance Junction to Ambient
60V
40V
50V
60V
5V
0.7A
1W
5W
200°C
–65 to 200°C
35°C / W
175°C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO39 PACKAGE (TO-205AD)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Pin 1 = Emitter
Underside View
Pin 2 = Base
Pin 3 = Collector
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3053L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| 2N3053SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N3053SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N3054 | 功能描述:兩極晶體管 - BJT NPN Silicon Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3054 | 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR |
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