參數(shù)資料
型號(hào)： 2N3019
廠商： SEMICOA CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
封裝： HERMETIC SEALED, METAL CAN-3
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 456K
代理商： 2N3019
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3019
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 30 mA
80
Volts
Collector-Base Cutoff Current
ICBO1
VCB = 140 Volts
10
A
Collector-Emitter Cutoff Current
ICES1
VCE = 90 Volts
10
nA
Collector-Emitter Cutoff Current
ICES2
VCE = 90 Volts, TA = 150°C
10
A
Emitter-Base Cutoff Current
IEBO1
VEB = 7 Volts
10
A
Emitter-Base Cutoff Current
IEBO2
VEB = 5 Volts
10
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 150 mA, VCE = 10 Volts
IC = 0.1 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 1 A, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
TA = -55°C
100
50
90
50
15
40
300
200
Base-Emitter Saturation Voltage
VBEsat
IC = 150 mA, IB = 15 mA
1.1
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.2
0.5
Volts
Small Signal Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 10 Volts, IC = 50 mA,
f = 20 MHz
5
20
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 5 Volts, IC = 1 mA,
f = 1 kHz
80
400
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
12
pF
Open Circuit Input Capacitance
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
60
pF
Collector Base time constant
rb’CC
VCB = 10 Volts, IE = 10 mA,
f = 79.8 MHz
400
ps
Noise Figure
NF
VCE = 10 Volts, IC = 100 A,
f = 200 Hz, Rg = 1 k
4
dB
Switching Characteristics
Saturated Turn-On Time
tON +tOFF
30
ns
Semicoa Corporation
Copyright
2010
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