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參數(shù)資料
| 型號： | 2N3019-JQR-BE4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | HERMETIC SEALED, TO-39, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2N3019-JQR-BE4 |
Document Number 3064
Issue 1
2N3019
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
IC = 30mA
IB = 0
IC = 100AIE = 0
IE = 100AIC = 0
VCB = 90V
IE = 0
VCB = 90V
IE = 0
Tamb = 150°C
VBE = 5V
IC = 0
IC = 150mA
IB = 15mA
IC = 500mA
IB = 50mA
IC = 150mA
IB = 15mA
IC = 0.1mA
VCE = 10V
IC = 10mA
VCE = 10V
IC = 150mA
VCE = 10V
IC = 500mA
VCE = 10V
IC = 1A
VCE = 10V
IC = 150mA
VCE = 0.5V
V(BR)CEO
Collector – Emitter Breakdown Voltage
V(BR)CBO*
Collector – Base Breakdown Voltage
V(BR)EBO*
Emitter – Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
VCE(sat)
Collector – Emitter Saturation Voltage
VBE(sat)
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
TC = –55°C
80
140
7
0.01
10
0.010
0.20
0.50
1.1
50
90
100
300
50
15
40
V
A
V
—
fT
Transition Frequency
Cobo
Output Capacitance
Cibo
Input Capacitance
hfe
Small Signal Current Gain
rb’Cc
Collector Base Time Constant
NF
Noise Figure
IC = 50mA
VCE = 10V
f = 20MHz
VCB = 10V
IE = 0
f = 1.0MHz
VBE = 0.5V IC = 0
f = 1.0MHz
IC = 1mA
VCE = 5V
f = 1kHz
IE = 10mA
VCB = 10V
f = 79.8MHz
IC = 100AVCE = 10V
f = 1kHz
RS = 1K
100
400
12
60
80
400
15
400
4
MHz
pF
—
ps
db
t* Pulse test tp = 300s , δ ≤ 1%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
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PDF描述 |
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| 2N3019G4 | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N3019-JQR-B | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N3019DCSMG4 | 1000 mA, 80 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-041BB |
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| 2N3022 | 3 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3019JX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-5 |
| 2N3019RB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-205AD |
| 2N3019S | 制造商:Aeroflex / Metelics 功能描述:SMALL SIGNAL TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 1A 3PIN TO-39 - Bulk |
| 2N3019S_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N3019SJAN | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39 |
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