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參數(shù)資料
| 型號(hào)： | 2N2919.MOD |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 30 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF |
| 封裝： | TO-77, 6 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 40K |
| 代理商： | 2N2919.MOD |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
—
mV
0.9
1
3
5
0.8
1
VCE = 5V
IC = 100A
See Note 2.
VCE = 5V
IC = 100A
VCE = 5V
IC = 10A to 1mA
VCE = 5V
IC = 100A
TA1 = +25°C
TA2 = –55°C
VCE = 5V
IC = 100A
TA1 = +25°C
TA2 = +125°C
TRANSISTOR MATCHING CHARACTERISTICS
Document Number 3302
Issue 1
2N2919
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions 1
Min.
Typ.
Max.
Unit
V
nA
A
nA
—
V
mho
—
pF
60
6
2
10
2
60
240
15
100
150
0.70
0.35
25
32
1
3
6
V(BR)CBO
Collector – Base Breakdown Voltage
V(BR)CEO* Collector – Emitter Breakdown Voltage
V(BR)EBO
Emitter – Base Breakdown Voltage
ICBO
Collector Cut-off Current
ICEO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
DC Current Gain
VBE
Base – Emitter Voltage
VCE(sat)
Collector – Emitter Saturation Voltage
hib
Small Signal Common – Base
Input Impedance
hob
Small Signal Common – Base
Output Admittance
|hfe|
Small Signal Common – Base
Current Gain
Cobo
Common – Base Open Circuit
Output Capacitance
IC = 10AIE = 0
IC = 10mA
IB = 0
IE = 10AIC = 0
VCB = 45V
IE = 0
TA = 150°C
VCE = 5V
IB = 0
VEB = 5V
IC = 0
VCE = 5V
IC = 10A
TA = –55°C
VCE = 5V
IC = 100A
VCE = 5V
IC = 1mA
VCE = 5V
IC = 100A
IB = 100AIC = 1mA
VCB = 5V
IC = 1mA
f = 1kHz
VCB = 5V
IC = 1mA
f = 1kHz
VCE = 5V
IC = 500A
f = 20MHz
VCB = 5V
IE = 0
f = 140kHz to 1MHz
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
INDIVIDUAL TRANSISTOR CHARACTERISTICS
* Pulse Test: tp = 300s , δ≤ 1%.
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as hFE1.
hFE1
hFE2
|VBE1 – VBE2|
|
(VBE1 – VBE2)TA|
Static Forward Current Gain
Balance Ratio
Base – Emitter Voltage Differential
Change With Temperature
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