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參數(shù)資料
| 型號： | 2N2907AUC |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 44K |
| 代理商： | 2N2907AUC |
1
2N2907ADIE
A Microsemi Company
580 Pleasant St.
Phone: 617-924-9280
Watertown, MA 02172
Fax:
617-924-1235
DIE SPECIFICATION
SWITCHING TRANSISTOR
PNP SILICON
FEATURES:
n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291
n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
n LOW VCE(sat): .4V @ IC = 150 mAdc
Absolute Maximum Ratings:
Symbol
Parameter
Limit
Unit
Vceo
Collector-Emitter Voltage
60
Vdc
Vcbo
Collector-Base Voltage
60
Vdc
Vebo
Emitter-Base Voltage
5.0
Vdc
Ic
Collector Current- Continuous
600
mAdc
Tj, Tstg
Operating Junction & Storage
-65 to +200 °C
Temperature Range
Sertech reserves the right to make changes to any product design, specification, or other information at any time without
prior notice.
Data Sheet, Die, 2N2907A MSW Rev. - 4/14/98
PHYSICAL DIMENSIONS
Packaging Options:
W: Wafer (100% probed)
U: Wafer (sample probed)
D:
Chip (Waffle Pack)
B: Chip (Vial)
V:
Chip (Waffle Pack, 100% visually inspected) X: Other
Processing Options:
Standard: Capable of JANTXV applications (No Suffix)
Suffix C:
Commercial
Suffix S:
Capable of S-Level equivalent applications
Metallization Options:
Standard: Al Top
/ Au Backside (No Dash #)
Dash 1:
Al Top
/
TiPdAg Backside
ORDERING INFORMATION:
PART #: 2N2907A_ _ - _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #:
Metallization Option
MSC0948.PDF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2907-B | 功能描述:兩極晶體管 - BJT 600mA 60v RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2907-BP | 功能描述:兩極晶體管 - BJT 600mA 60v RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2907CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
| 2N2907J.TX.V | 制造商:RAYTHEON 制造商全稱:RAYTHEON 功能描述:Medium Current General Purpose Amplifiers and Switches |
| 2N2907MC | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-18 |
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