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參數(shù)資料
| 型號： | 2N2907ACSM-RH |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC1-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 86K |
| 代理商： | 2N2907ACSM-RH |
2N2907ACSM-RH
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
RADIATION TEST CONCLUSIONS
Six samples plus one control sample were used during testing. Each sample was biased and
exposed to radiation using a dose rate of 360 rad(Si)/hour at room temperature.
All parameters remained within specifications limits with the exception of hFE1 and hFE2 which were
outside the limits at 59Krad and 119Krad respectively. Post annealing at room temperature for 24
hours had no appreciable effect.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
hFE1
DC Current Gain
hFE2
DC Current Gain
hFE3
DC Current Gain
VCE(sat)
Collector – Emitter Saturation Voltage
ICBO
Collector – Base Cut-off Current
VCE = -10V
IC = -100A
VCE = -10V
IC = -10mA
VCE = -10V
IC = -150mA
IB = -15mA
VCB = -50V
IE = 0
75
100
300
-0.4
-0.01
—
V
A
TEST CONDITIONS(Tcase = 25°C unless otherwise stated)
BIAS CONDITIONS
Document Number 5552
Issue 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2907ADCSM | 制造商:TT Electronics/ Semelab 功能描述:TRANSHIRELDUAL PNP60V06ALCC1 |
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| 2N2907ADIE | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR PNP SILICON |
| 2N2907AE3 | 制造商:Microsemi Corporation 功能描述:2N2907AE3 - Bulk |
| 2N2907AHR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Hi-Rel 60 V, 0.6 A PNP transistor |
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