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參數(shù)資料
| 型號(hào)： | 2N2907ABS |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | 2N2907ABS |
2
Electrical Characteristics @ Tj = 25
°C
Symbol
Parameter
Conditions
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)CBO
Breakdown Voltage, Collector to Base
Bias Cond. D, IC=10uAdc
60
Vdc
V(BR)EBO
Breakdown Voltage, Emitter to Base
Bias Cond. D, IE=10uAdc
5
Vdc
V(BR)CEO
Breakdown Voltage, Collector to Emitter
Bias Cond. D, IC= 10mAdc, pulsed
60
Vdc
ICES
Collector to Emitter Cutoff Current
Bias Cond. D, VCE=50Vdc
50 nAdc
ICBO1
Collector to Base Cutoff Current
Bias Cond. D, VCB=50Vdc
10 nAdc
IEBO
Emitter to Base Cutoff Current
Bias Cond. D, VEB= 4Vdc
50 nAdc
ON CHARACTERISTICS
hFE1
Forward-Current Transfer Ratio
VCE=10Vdc, IC=0.1mAdc
75
hFE2
Forward-Current Transfer Ratio
VCE=10Vdc, IC=1.0mAdc
100
450
hFE3
Forward-Current Transfer Ratio
VCE=10Vdc, IC=10mAdc
100
hFE4
Forward-Current Transfer Ratio
VCE=10Vdc, IC=150mAdc, pulsed
100
300
hFE5
Forward-Current Transfer Ratio
VCE=10Vdc, IC=500mAdc, pulsed
50
VCE(sat)1
Collector to Emitter Saturation Voltage
IC=150mAdc, IB=15mAdc, pulsed
0.4 Vdc
VCE(sat)2
Collector to Emitter Saturation Voltage
IC=500mAdc, IB=50mAdc, pulsed
1.6 Vdc
VBE(sat)1
Base to Emitter Saturation Voltage
IC=150mAdc, IB=15mAdc, pulsed
0.6
1.3 Vdc
VBE(sat)2
Base to Emitter Saturation Voltage
IC=500mAdc, IB=50mAdc, pulsed
2.6 Vdc
SMALL SIGNAL CHARACTERISTICS
hfe
Short Circuit Forward Current Xfer Ratio
VCE= 10Vdc,IC =1mAdc, f= 1kHz
100
/hfe/
Magnitude of Short Circuit Forward
VCE= 20Vdc,IC =50mAdc, f=100MHz
2
Current Transfer Ratio
Cobo
Output Capacitance
VCB= 10Vdc, IE =0, 100kHz< f <1MHz
8 pF
Cibo
Input Capacitance
VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz
30 pF
SWITCHING CHARACTERISTICS
ton
Saturated Turn-on Time
As defined in 19500/291 Figure 7
45 nS
toff
Saturated Turn-off Time
As defined in 19500/291 Figure 8
300 nS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2907AC1 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N2907AC3 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N2907ACECC | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO18 |
| 2N2907ACSM | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTORHIRELPNP60V0.6ALCC1 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR,HIREL,PNP,60V,0.6A,LCC1 制造商:SEMELAB 功能描述:TRANSISTOR,HIREL,PNP,60V,0.6A,LCC1; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:500mW; DC Collector Current:-600mA; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:3 ;RoHS Compliant: Yes |
| 2N2907ACSM_09 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
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