參數(shù)資料
型號(hào)： 2N29071AXS
廠商： Microsemi Corporation
英文描述： SWITCHING TRANSISTOR PNP SILICON
中文描述： 開關(guān)晶體管的新進(jìn)步黨硅
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 44K
代理商： 2N29071AXS
2
Electrical Characteristics @ Tj = 25
°
C
Symbol
Parameter
Conditions
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICES
ICBO1
IEBO
Breakdown Voltage, Collector to Base
Breakdown Voltage, Emitter to Base
Breakdown Voltage, Collector to Emitter
Collector to Emitter Cutoff Current
Collector to Base Cutoff Current
Emitter to Base Cutoff Current
Bias Cond. D, IC=10uAdc
Bias Cond. D, IE=10uAdc
Bias Cond. D, IC= 10mAdc, pulsed
Bias Cond. D, VCE=50Vdc
Bias Cond. D, VCB=50Vdc
Bias Cond. D, VEB= 4Vdc
60
5
60
Vdc
Vdc
Vdc
50 nAdc
10 nAdc
50 nAdc
ON CHARACTERISTICS
hFE1
hFE2
hFE3
hFE4
hFE5
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
VCE=10Vdc, IC=0.1mAdc
VCE=10Vdc, IC=1.0mAdc
VCE=10Vdc, IC=10mAdc
VCE=10Vdc, IC=150mAdc, pulsed
VCE=10Vdc, IC=500mAdc, pulsed
IC=150mAdc, IB=15mAdc, pulsed
IC=500mAdc, IB=50mAdc, pulsed
IC=150mAdc, IB=15mAdc, pulsed
IC=500mAdc, IB=50mAdc, pulsed
75
100
100
100
50
450
300
0.4 Vdc
1.6 Vdc
1.3 Vdc
2.6 Vdc
0.6
SMALL SIGNAL CHARACTERISTICS
hfe
/hfe/
Short Circuit Forward Current Xfer Ratio
Magnitude of Short Circuit Forward
Current Transfer Ratio
Output Capacitance
Input Capacitance
VCE= 10Vdc,IC =1mAdc, f= 1kHz
VCE= 20Vdc,IC =50mAdc, f=100MHz
100
2
Cobo
Cibo
VCB= 10Vdc, IE =0, 100kHz< f <1MHz
VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz
8 pF
30 pF
SWITCHING CHARACTERISTICS
ton
toff
Saturated Turn-on Time
Saturated Turn-off Time
As defined in 19500/291 Figure 7
As defined in 19500/291 Figure 8
45 nS
300 nS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N29071AXS-1 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR PNP SILICON
2N2907A 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N2907A DIE 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk
2N2907A DL 功能描述:DIE TRANS PNP MED PWR GP DUAL 制造商:fairchild/micross components 系列:* 零件狀態(tài):有效 標(biāo)準(zhǔn)包裝:25
2N2907A W/GOLD 功能描述:TRANS PNP 60V 0.6A TO-18 制造商:central semiconductor corp 系列:* 零件狀態(tài):生命周期結(jié)束 標(biāo)準(zhǔn)包裝:500
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