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參數(shù)資料
| 型號： | 2N29071AXS-1 |
| 廠商： | Microsemi Corporation |
| 英文描述： | 10-169611-03P |
| 中文描述： | 開關(guān)晶體管的新進步黨硅 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 44K |
| 代理商： | 2N29071AXS-1 |
2
Electrical Characteristics @ Tj = 25
°
C
Symbol
Parameter
Conditions
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICES
ICBO1
IEBO
Breakdown Voltage, Collector to Base
Breakdown Voltage, Emitter to Base
Breakdown Voltage, Collector to Emitter
Collector to Emitter Cutoff Current
Collector to Base Cutoff Current
Emitter to Base Cutoff Current
Bias Cond. D, IC=10uAdc
Bias Cond. D, IE=10uAdc
Bias Cond. D, IC= 10mAdc, pulsed
Bias Cond. D, VCE=50Vdc
Bias Cond. D, VCB=50Vdc
Bias Cond. D, VEB= 4Vdc
60
5
60
Vdc
Vdc
Vdc
50 nAdc
10 nAdc
50 nAdc
ON CHARACTERISTICS
hFE1
hFE2
hFE3
hFE4
hFE5
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
VCE=10Vdc, IC=0.1mAdc
VCE=10Vdc, IC=1.0mAdc
VCE=10Vdc, IC=10mAdc
VCE=10Vdc, IC=150mAdc, pulsed
VCE=10Vdc, IC=500mAdc, pulsed
IC=150mAdc, IB=15mAdc, pulsed
IC=500mAdc, IB=50mAdc, pulsed
IC=150mAdc, IB=15mAdc, pulsed
IC=500mAdc, IB=50mAdc, pulsed
75
100
100
100
50
450
300
0.4 Vdc
1.6 Vdc
1.3 Vdc
2.6 Vdc
0.6
SMALL SIGNAL CHARACTERISTICS
hfe
/hfe/
Short Circuit Forward Current Xfer Ratio
Magnitude of Short Circuit Forward
Current Transfer Ratio
Output Capacitance
Input Capacitance
VCE= 10Vdc,IC =1mAdc, f= 1kHz
VCE= 20Vdc,IC =50mAdc, f=100MHz
100
2
Cobo
Cibo
VCB= 10Vdc, IE =0, 100kHz< f <1MHz
VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz
8 pF
30 pF
SWITCHING CHARACTERISTICS
ton
toff
Saturated Turn-on Time
Saturated Turn-off Time
As defined in 19500/291 Figure 7
As defined in 19500/291 Figure 8
45 nS
300 nS
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