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參數(shù)資料
| 型號(hào)： | 2N2904U |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | US6, 6 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 2N2904U |
2008. 9. 23
2/4
2N2904U
Revision No : 1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICEX
VCE=30V, VEB=3V
-
50
nA
Base Cut-off Current
IBL
VCE=30V, VEB=3V
-
50
nA
Collector-Base Breakdown Voltage
V(BR)CBO
IC=10 A, IE=0
60
-
V
Collector-Emitter Breakdown Voltage *
V(BR)CEO
IC=1mA, IB=0
40
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=10 A, IC=0
6.0
-
V
DC Current Gain
*
hFE(1)
VCE=1V, IC=0.1mA
40
-
hFE(2)
VCE=1V, IC=1mA
70
-
hFE(3)
VCE=1V, IC=10mA
100
-
300
hFE(4)
VCE=1V, IC=50mA
60
-
hFE(5)
VCE=1V, IC=100mA
30
-
Collector-Emitter Saturation Voltage
*
VCE(sat)1
IC=10mA, IB=1mA
-
0.2
V
VCE(sat)2
IC=50mA, IB=5mA
-
0.3
Base-Emitter Saturation Voltage
*
VBE(sat)1
IC=10mA, IB=1mA
0.65
-
0.85
V
VBE(sat)2
IC=50mA, IB=5mA
-
0.95
Transition Frequency
fT
VCE=20V, IC=10mA, f=100MHz
300
-
MHz
Collector Output Capacitance
Cob
VCB=5V, IE=0, f=1MHz
-
4.0
pF
Input Capacitance
Cib
VBE=0.5V, IC=0, f=1MHz
-
8.0
pF
Input Impedance
hie
VCE=10V, IC=1mA, f=1kHz
1.0
-
10
k
Voltage Feedback Ratio
hre
0.5
-
8.0
x10
-4
Small-Signal Current Gain
hfe
100
-
400
Collector Output Admittance
hoe
1.0
-
40
Noise Figure
NF
VCE=5V, IC=0.1mA Rg=1k ,
-
5.0
dB
Switching Time
Delay Time
td
Vout
Total< 4pF
C
10k
275
V =3.0V
CC
300ns
-0.5V
10.9V
0
t ,t < 1ns, Du=2%
r
in
V
f
-
35
nS
Rise Time
tr
-
35
Storage Time
tstg
20s
1N916
or equiv.
10.9V
-9.1V
Vout
Total< 4pF
C
V =3.0V
CC
275
10k
Vin
0
t ,t < 1ns, Du=2%
rf
-
200
Fall Time
tf
-
50
ELECTRICAL CHARACTERISTICS (Ta=25
)
* Pulse Test : Pulse Width
300 S, Duty Cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2904U1 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
| 2N2905 | 功能描述:兩極晶體管 - BJT USE 511-2N2905A TO-39 PNP GEN PUR SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2905/A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP Switching Transistors |
| 2N2905_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| 2N2905A | 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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