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參數(shù)資料
| 型號： | 2N2904JX |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon PNP Transistor |
| 中文描述： | 硅PNP晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 205K |
| 代理商： | 2N2904JX |
Copyright
2002
Rev. H
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 2 of 2
2N2904
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
°
C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Volts
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10 mA
40
Collector-Base Cutoff Current
I
CBO1
V
CB
= 60 Volts
10
μ
A
Collector-Base Cutoff Current
I
CBO2
V
CB
= 50 Volts
20
nA
Collector-Base Cutoff Current
I
CBO3
V
CB
= 50 Volts, T
A
= 150
O
C
20
μ
A
Collector-Emitter Cutoff Current
I
CES
V
CE
= 40 Volts
1
μ
A
Emitter-Base Cutoff Current
I
EBO1
V
EB
= 5 Volts
10
μ
A
Emitter-Base Cutoff Current
I
EBO2
V
EB
= 3.5 Volts
50
nA
On Characteristics
Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
Test Conditions
I
C
= 0.1 mA, V
CE
= 10 Volts
I
C
= 1.0 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 500 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
T
A
= -55
O
C
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Min
20
25
35
40
20
15
Typ
Max
175
120
1.3
2.6
0.4
1.6
Units
DC Current Gain
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Volts
Collector-Emitter Saturation Voltage
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
V
CE
= 20 Volts, I
C
= 50 mA,
f = 100 MHz
V
CE
= 10 Volts, I
C
= 1 mA,
f = 1 kHz
V
CB
= 10 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 2.0 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
|h
FE
|
2.0
h
FE
25
Open Circuit Output Capacitance
C
OBO
8
pF
Open Circuit Input Capacitance
C
IBO
30
pF
Switching Characteristics
Saturated Turn-On Time
Saturated Turn-Off Time
t
on
45
300
ns
t
off
ns
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