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參數(shù)資料
| 型號(hào)： | 2N2904E |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| 中文描述： | 外延平面NPN晶體管（通用，開關(guān)） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2N2904E |
2002. 9. 17
1/4
SEMICONDUCTOR
TECHNICAL DATA
2N2904E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=50nA(Max.), I
BL
=50nA(Max.)
@V
CE
=30V, V
EB
=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) @I
C
=50mA, I
B
=5mA.
Low Collector Output Capacitance
: C
ob
=4pF(Max.) @V
CB
=5V.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
+
+
+
+
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
+
+
+
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A
C
C
J
H
1
2
3
6
4
P
P
P
5
5
1. Q EMITTER
2. Q BASE
3. Q BASE
4. Q COLLECTOR
5. Q EMITTER
6. Q COLLECTOR
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
200
mA
Base Current
I
B
50
mA
Collector Power Dissipation
P
C
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
* Total Rating
1
Q1
2
3
6
5
4
Q2
Type Name
Marking
Z C
EQUIVALENT CIRCUIT (TOP VIEW)
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