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參數(shù)資料
| 型號(hào)： | 2N2904A |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 450K |
| 代理商： | 2N2904A |
Rev. H
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N2904A
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N2904AJ)
JANTX level (2N2904AJX)
JANTXV level (2N2904AJV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power
PNP silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 0600
Reference document:
MIL-PRF-19500/290
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
60
Volts
Collector-Base Voltage
VCBO
60
Volts
Emitter-Base Voltage
VEBO
5
Volts
Collector Current, Continuous
IC
600
mA
Power Dissipation, TA = 25 °C
Derate above 60
°C
PT
0.8
5.7
W
mW/
°C
Power Dissipation, TC = 25 °C
Derate above 25
°C
PT
3.0
17.2
W
mW/
°C
Thermal Resistance
RθJA
175
°C/W
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
Semicoa Company
Copyright
2010
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| 2N2904A_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
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| 2N2904AJAN | 制造商:Microsemi Corporation 功能描述: |
| 2N2904AJANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin TO-39 |
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