參數(shù)資料
型號: 2N2896G4
廠商: SEMELAB LTD
元件分類: 小信號晶體管
英文描述: 1000 mA, 90 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
封裝: HERMETIC SEALED, METAL PACKAGE-3
文件頁數(shù): 2/2頁
文件大?。?/td> 18K
代理商: 2N2896G4
2N2896
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 5976
Issue 1
Parameter
Test Conditions
Min. Typ. Max. Unit.
V(BR)CER Collector - Emitter Breakdown Voltage (1)
IC = 100mA ,RBE = 10
140
V
VCEO(sus) Collector - Emitter Sustaining Voltage (1)
IC = 100mA , IB =0
90
V
V(BR)CBO Collector - Base Breakdown Voltage
IC = 0.1mA , IE =0
140
V
V(BR)EBO Emitter - Base Breakdown Voltage
IE = 0.1mA , IC =0
7
V
ICBO
Colllector Cut Off Current
VCB = 60V , IE = 0
VCB = 90V , IE = 0
VCB = 90V , IE = 0 TA =150 °C
0.01
10
A
IEBO
Emitter Cut Off Current
VEB = 5V , IC = 0
0.01
A
hFE
DC Current
IC =1mA, VCE = 10V
IC =10mA, VCE = 10V TA = -55 °C
IC =150mA, VCE = 10V
35
20
60
200
VCE(sat)
Collector - Emitter Saturation Voltage (1)
IC =150mA , IB = 15mA
0.6
V
VBE(sat)
Base - Emitter Saturation Voltage (1)
IC =150mA , IB = 15A
1.2
V
fT
Current Gain - Bandwith Product
IC =50mA ,VCE =10V, f=100 MHZ
120
MHZ
Cobo
Output Capacitance
VCB =10V , IE = 0 , f=1 MHZ
15
pF
Cibo
Input Capacitance
VEB =0.5V , IC = 0 , f=1 MHZ
80
pF
hFE
Small-Signal Current Gain
IC =5mA, VCE = 5V, f=1 KHZ
50
275
ELECTRICAL CHARACTERISTICS Continued (TA = 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300
s ,Duty Cycle < 2%
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