參數資料
型號： 2N2894CSM-JQR-BG4
廠商： SEMELAB LTD
元件分類： 小信號晶體管
英文描述： 200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, LCC1-3
文件頁數： 2/3頁
文件大小： 22K
代理商： 2N2894CSM-JQR-BG4
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
nA
V
–—
MHz
pF
ns
– 12
– 4
– 10
– 80
–0.15
–0.20
– 0.50
–0.78
–0.98
–0.85
–1.2.
–1.7
30
40
150
25
17
400
6
60
9
IC = 10mAIE = 0
IC = 10mA
IB = 0
IE = 10mAIC = 0
VCB = –6V
Tamb = 125°C
VBE = 0
VCE = –6V
IC = –10mA
IB = –1mA
IC = –30mA
IB = –3mA
IC = –100mA IB = –10mA
IC = –10mA
IB = –1mA
IC = –30mA
IB = –3mA
IC = –100mA IB = –10mA
IC = –10mA
VCE = –0.3V
IC = –30mA
VCE = –0.5V
IC = –100mA VCE = –1V
IC = –30mA
VCE = –0.5V
Tamb = 125°C
VCE = –10V
f = 100MHz
IC = –30mA
VEB = –5V
IC = 0
f = 1MHz
VCB = –5V
IC = 0
f = 1MHz
IC = –30mA
VCE = –2V
IB2 = –1.5mA
IC = –30mA
VCE = –2V
IB1 = IB2= –1.5mA
2N2894CSM
Prelim. 10/98
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
V(BR)CBO* Collector – Base Breakdown Voltage
V(BR)CEO
Collector – Emitter Breakdown Voltage
V(BR)EBO
Emitter – Base Breakdown Voltage
ICBO
Collector Cut-off Current
ICES
Collector Cut-off Current
VCE(sat)
Collector – Emitter Saturation Voltage
VBE(sat)
Base – Emitter On Voltage
hFE
DC Current Gain
fT
Current Gain Bandwidth Product
Cebo
Emitter – Base – Capacitance
Ccbo
Collector – Base – Capacitance
ton
Turn on Time
toff
Turn off Time
* Pulse Test: tp 300ms, d 2%.
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