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| 型號： | 2N2894AC1B-JQRS.GRPB |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 276K |
| 代理商： | 2N2894AC1B-JQRS.GRPB |
HIGH SPEED PNP
SILICON BIPOLAR TRANSISTOR
2N2894AC1
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 8519
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 1
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min
Typ
Max
Units
V(BR)CBO
(1)
Collector-Base Breakdown Voltage
IC = -10A
IE = 0
-12
V(BR)CEO
(1)
Collector-Emitter Breakdown Voltage
IC = -10mA
IB = 0
-12
V(BR)EBO
(1)
Emitter-Base Breakdown Voltage
IE = -100A
IC = 0
-4.5
V
VCB = -10V
IE = 0
-100
nA
ICBO
Collector Cut-Off Current
TA = 125°C
-10
A
IC = -10mA
VCE = -0.3V
30
IC = -30mA
VCE = -0.5V
40
120
TA = -55°C
20
hFE
(1)
Forward-current transfer ratio
IC = -100mA
VCE = -1.0V
30
IC = -10mA
IB = -1.0mA
-0.15
IC = -30mA
IB = -3.0mA
-0.19
VCE(sat)
(1)
Collector-Emitter Saturation Voltage
IC = -100mA
IB = -10mA
-0.45
V
IC = -10mA
IB = -1.0mA
-0.98
IC = -30mA
IB = -3.0mA
-1.15
VBE(sat)
(1)
Base-Emitter Saturation Voltage
IC = -100mA
IB = -10mA
-1.50
V
DYNAMIC CHARACTERISTICS
IC = -30mA
VCE = -10V
fT
Current Gain-Bandwidth Product
f = 100MHz
650
MHz
COBO
Output Capacitance
VCB = -5V, IE = 0, 1.0MHz
4.5
CIBO
Input Capacitance
VEB = -0.5V, IC = 0, 1.0MHz
6.0
pF
ton
Turn-On Time
VCC = -2V
IC = -30mA
60
toff
Turn-Off Time
IB1 = 1.5mA
IB2 = -1.5mA
60
ns
Notes
(1)
Pulse Width < 300s, Duty Cycle <2%
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