參數(shù)資料
型號(hào)： 2N2894-JQR-BG4
廠商： SEMELAB LTD
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 26K
代理商： 2N2894-JQR-BG4
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
mA
nA
V
—
MHz
pF
ns
12
4
10
80
0.15
0.2
0.5
0.78
0.98
0.85
1.2.
1.7
30
40
150
17
25
400
6
60
90
IC = 10mA
IB = 0
IC = 10mA
VBE = 0
IC = 10mA
IE = 0
IE = 100mA
IC = 0
VCB = 6V
Tamb = 125°C
VCE = 6V
VBE = 0
VCE = 6V
VBE = 0
IC = 10mA
IB = 1mA
IC = 30mA
IB = 3mA
IC = 100mA
IB = 10mA
IC = 10mA
IB = 1mA
IC = 30mA
IB = 3mA
IC = 100mA
IB = 10mA
IC = 10mA
VCE = 0.3V
IC = 30mA
VCE = 0.5V
IC = 30mA
VCE = 0.5V
Tamb = -55°C
IC = –30mA
VCE = –0.5V
VCE = 10V
f = 100MHz
IC = 30mA
VCB = 5V
IE = 0
f = 140KHz
VBE = 0.5V
IC = 0
f = 140KHz
VCC = 2V
IC = 30mA
IB1 = – IB2=1.5mA
2N2894
Prelim. 4/99
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
BVCEO(SUS) Collector – Base BreakdownVoltage
BVCES
Collector – Emitter Breakdown Voltage
BVCBO
Collector – Base Breakdown Voltage
BVEBO
Emitter Base Breakdown Voltage
ICBO
Collector Cut-off Current
ICES
Collector Cut-off Current
IB
Base Current
VCE(sat)
Collector – Emitter Saturation Voltage
VBE(sat)
Base – Emitter On Voltage
hFE
DC Current Gain
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
Cib
Input Capacitance
ton
Turn on Time
toff
Turn off Time
* Pulse Test: tp 300ms, d 1%.
相關(guān)PDF資料
PDF描述
2N2894CSM-JQR-BG4 200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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2N2897 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N2894L 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 200MA I(C) | TO-18
2N2895 制造商:motorola 功能描述:DIODE 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 18 NPN Silicon Transistor
2N2896 功能描述:兩極晶體管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N2897 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 18 NPN Silicon Transistor
2N2898 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 1A I(C) | TO-46
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