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參數資料
| 型號： | 2N2880 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 Amp, 80V, Planar, NPN Power Transistors JAN,JTX,JANTXV,JANS |
| 中文描述： | 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-59 |
| 文件頁數： | 2/3頁 |
| 文件大小： | 85K |
| 代理商： | 2N2880 |
MSC0950A.DOC 11-09-98
2N2880
ELECTRICAL CHARACTERISTICS
(25
°
Case Temperature Unless Otherwise Noted)
VALUE
Min.
110
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Max.
----
Units
BV
CBO
*
Collector-Base Voltage
I
C
= 10
μ
Adc, Cond. D
Vdc
BV
CEO
*
Collector-Emitter Voltage
(Note 1)
I
C
= 0.1 Adc, Cond. D
80
----
Vdc
BV
EBO
*
I
CEO
*
Emitter-Base Voltage
Collector-Emitter
Cutoff Current
Collector-Emitter
Cutoff Current
Collector-Base
Cutoff Current
Emitter-Base
Cutoff Current
DC Current Gain
(Note 1)
I
E
= 10
μ
Adc, Cond. D
V
CE
= 60 Vdc, Cond. D
8
----
20
Vdc
μ
Adc
----
I
CEX
*
V
CE
= 110 Vdc, V
EB
= 0.5 Vdc, Cond. A
V
CE
= 80 Vdc, V
EB
= 0.5 Vdc, Cond. A, T
A
= 150
°
C
V
CB
= 80 Vdc, Cond. D
V
CB
= 60 Vdc, Cond. D, T
A
= - 150
°
C
V
EB
= 6 Vdc, Cond. D
----
----
----
----
----
1.0
50
0.2
10
0.2
μ
Adc
μ
A
μ
Adc
----
μ
Adc
I
CBO
*
I
EBO
*
hFE*
I
C
= 50 mAdc, V
CE
= 5 Vdc
I
C
= 1 Adc, V
CE
= 5 Vdc
I
C
= 5 Adc, V
CE
= 5 Vdc
I
C
= 1 Adc, V
CE
= 5 Vdc, T
A
= - 55
°
C
40
40
15
15
120
120
----
----
----
----
----
----
hFE*
V
CE(sat)
*
AC Current Gain
I
C
= 50 mAdc, V
CE
= 5 Vdc, f =
I
C
= 1 Adc, I
B
= 0.1 Adc
I
C
= 5 Adc, I
B
= 0.5 Adc
I
C
= 1 Adc, I
B
= 0.1 Adc
è
KHz
40
----
----
120
0.25
1.5
----
Vdc
Vdc
Collector Saturation
Voltage (Note 1)
Base Saturation
Voltage (Note 1)
Base On-Voltage
(Note 1)
Gain-Bandwidth Product
V
BE(sat)*
----
1.2
Vdc
V
BE(on)
*
I
C
= 1 Adc, V
CE
= 2 Vdc
----
1.2
Vdc
f
T
*
I
C
= 1 Adc, V
CE
= 10 Vdc, f = 10 MHz
30
120
MHz
C
ob
*
Output Capacitance
V
CB
= 10 Vdc, 1
E
= 0, f = 1 MHz
----
150
pf
td*
Delay Time
I
C
= 1 A, I
B
1
= I
B
2
= 100 ma
----
60
ns
tr*
Rise Time
I
C
= 1 A, I
B
1
= I
B
2
= 100 ma
----
300
ns
ts*
Storage Time
I
C
= 1 A, I
B
1,
= I
B
2
= 100 ma
----
1.7
μ
s
tf*
I
S/B
*
Fall Time
Forward-Biased
Second Breakdown
Clamped Reverse-
Biased Second
Breakdown
Unclamped Reverse-
Biased Second
Breakdown
I
C
= 1 A, I
B
1
= I
B
2
= 100 ma
V
CE
= 20 Vdc, t = 10 Sec, T
C
= 100
°
C
V
CE
= 80 Vdc, t = 10 Sec, T
C
= 100
°
C
I
C
= 5 A, L
= 1 mH, V
Clamp
= 110 V, T
C
= 100
°
C
I
B
= 0.5 A, R
BB2
= 20
, V
BB2
= -3.0V
----
1.5
80
12.5
300
----
----
----
ns
Adc
mAdc
mj
E
S/B
*
E
S/B
*
I
C
= 5 A, L
= 1 mH, Base Open
I
C
= 1.6 A, L
= 10 mH, Base Open
12.5
12.8
----
----
mj
mj
Note 1: Pulse Test: PW = 300
μ
s, Duty Cycle
≤
2%.
* Indicates MIL-S-19500/315
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